Pulsing Scheme for a Ferroelectric Memory Bit-Cell to Minimize Read or Write Disturb Effect and Refresh Logic
A patent family: one line of work, grouped by real continuity rather than by a technology label
inferred from titles. 13 of these applications claim priority to application 17/529,258, filed Nov 17, 2021. A shared origin can cover several different claimed inventions, which is why members here may not share a title. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
| Patent | Title | Holder | Status | Expires | Time remaining | Confidence |
|---|---|---|---|---|---|---|
| US 11,482,270 | Pulsing Scheme for a Ferroelectric Memory Bit-Cell to Minimize Read or Write Disturb Effect and Refresh Logic In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,521,668 | Pulsing Scheme for a Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Word-Line to Minimize Read or Write Disturb Effects In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,532,344 | Reading Scheme for 1TNC Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Bit-Line and with Individual Switches on Plate-Lines of the Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,538,514 | Writing Scheme for 1TNC Ferroelectric Memory Bit-Cell with Plate-Lines Parallel to a Bit-Line and with Individual Switches on the Plate-Lines of the Bit-Cell In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| US 11,605,413 | Reading Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Lines Parallel to a Bit-Line and with Individual Switches on the Plate-Lines of the Bit-Cell In force · Medium confidence | Kepler Computing Inc. | In force | Medium confidence | ||
| US 11,610,619 | Pulsing Scheme for a 1TNC Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Word-Line to Minimize Read or Write Disturb Effects In force · Medium confidence | Kepler Computing Inc. | In force | Medium confidence | ||
| US 11,610,620 | Pulsing Scheme for a 1TNC Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Bit-Line to Minimize Read or Write Disturb Effects In force · Medium confidence | Kepler Computing Inc. | In force | Medium confidence | ||
| US 11,646,071 | Reading Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Bit-Line and with Individual Switches and Control on Plate-Lines of the Bit-Cell In force · Medium confidence | Kepler Computing Inc. | In force | Medium confidence | ||
| US 11,664,060 | Writing Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Lines Parallel to a Bit-Line and with Individual Switches on the Plate-Lines of the Bit-Cell In force · Medium confidence | Kepler Computing Inc. | In force | Medium confidence | ||
| US 11,735,245 | Read Scheme for Multi-Element Gain Ferroelectric Memory Bit-Cell with Plate-Line Parallel to Word-Line to Minimize Read or Write Disturb Effects In force · High confidence | Kepler Computing Inc. | In force | High confidence | ||
| 4 more patents in this group · Pro | ||||||
10 of 14 records shown. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.
Pro members see all 14.
Updated Nov 14, 2026 · includes USPTO assignment & status data published Nov 14, 2026 and grant & fee data published Nov 10, 2026 (weekly) · how we know
Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.