Methods of Forming a Field Effect Transistor, Including Forming a Region Providing Enhanced Oxidation

Samsung Electronics Co., Ltd.

A patent family: one line of work, grouped by real continuity rather than by a technology label inferred from titles. 4 of these applications claim priority to application 63/034,525, filed Jun 4, 2020. A shared origin can cover several different claimed inventions, which is why members here may not share a title. In-force patents first, soonest term end first, then patent number. Expired patents follow, in the same order.

Patent	Title	Holder	Status	Expires	Time remaining	Confidence
US 9,257,327	Methods of Forming a Field Effect Transistor, Including Forming a Region Providing Enhanced Oxidation Samsung Electronics Co., Ltd. In force Term ends Apr 9, 2033 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Apr 9, 2033	Term ends Apr 9, 2033	High confidence
US 9,331,176	Methods of Forming Field Effect Transistors, Including Forming Source and Drain Regions in Recesses of Semiconductor Fins Samsung Electronics Co., Ltd. In force Term ends Apr 25, 2033 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Apr 25, 2033	Term ends Apr 25, 2033	High confidence
US 9,236,444	Methods of Fabricating Quantum Well Field Effect Transistors Having Multiple Delta Doped Layers Samsung Electronics Co., Ltd. In force Term ends Jul 22, 2033 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Jul 22, 2033	Term ends Jul 22, 2033	High confidence
US 9,263,549	FIN-FET Transistor with Punchthrough Barrier and Leakage Protection Regions Samsung Electronics Co., Ltd. In force Term ends Oct 8, 2033 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Oct 8, 2033	Term ends Oct 8, 2033	High confidence
US 9,064,699	Methods of Forming Semiconductor Patterns Including Reduced Dislocation Defects and Devices Formed Using Such Methods Samsung Electronics Co., Ltd. In force Term ends Apr 22, 2034 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Apr 22, 2034	Term ends Apr 22, 2034	High confidence
US 9,484,423	Crystalline Multiple-Nanosheet III-V Channel Fets Samsung Electronics Co., Ltd. In force Term ends May 6, 2034 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends May 6, 2034	Term ends May 6, 2034	High confidence
US 9,570,609	Crystalline Multiple-Nanosheet Strained Channel Fets and Methods of Fabricating the Same Samsung Electronics Co., Ltd. In force Term ends May 6, 2034 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends May 6, 2034	Term ends May 6, 2034	High confidence
US 9,525,053	Integrated Circuit Devices Including Strained Channel Regions and Methods of Forming the Same Samsung Electronics Co., Ltd. In force Term ends Jul 12, 2034 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Jul 12, 2034	Term ends Jul 12, 2034	High confidence
US 9,112,130	Quantum Interference Based Logic Devices Including Electron Monochromator Samsung Electronics Co., Ltd. In force Term ends Sep 5, 2034 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Sep 5, 2034	Term ends Sep 5, 2034	High confidence
US 9,178,045	Integrated Circuit Devices Including FinFETs and Methods of Forming the Same Samsung Electronics Co., Ltd. In force Term ends Sep 18, 2034 · High confidence	Samsung Electronics Co., Ltd.	In force	Term ends Sep 18, 2034	Term ends Sep 18, 2034	High confidence
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32 of these are in force and held by Samsung Electronics Co., Ltd..

Updated Nov 14, 2026 · includes USPTO assignment & status data published Nov 14, 2026 and grant & fee data published Nov 10, 2026 (weekly) · how we know

Computed patent terms end on the dates shown. Related patents and pending applications may cover overlapping subject matter.